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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current CONDITIONS BUT56 Open emitter BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg HAN INC BUT56A SEM GE Open base Open collector UTO OND IC 800 1000 400 450 6 8 10 4 VALUE R UNIT V V V A A A W ae ae Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 100 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX 1.25 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUT56 V(BR)CEO Collector-emitter breakdown voltage BUT56A V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUT56 ICES Collector cut-off current BUT56A hFE-1 IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150ae VCE=1000V; VBE=0 Tj=150ae IC=1A ; VCE=5V IC=4A ; VCE=5V IC=3A ; VCE=2V IC=100mA ;LC=125mH CONDITIONS BUT56 BUT56A SYMBOL MIN 400 TYP. MAX UNIT V 450 6 5.0 2.0 1.0 2.0 mA 1.0 2.0 15 5.5 4 45 V V V hFE-2 DC current gain DC current gain Transition frequency BUT56 BUT56A fT Switching times toff tf Turn-off time Fall time HAN INC SEM GE IC=0.5A ;VCE=10V;f=1.0MHz UTO OND IC 10 R MHz 4 IC=4A ;IB1=-IB2=1.25A tp=20|I s 1 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT56 BUT56A HAN INC SEM GE UTO OND IC R Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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